Key Performance Features:
  • High-intensity beam output
    • 350 Watt 6” NUV Lightsource (with broadband 365/405/436 nm mirrors)

      365 nm Output Intensity – 25-30 mW/cm2

      405 nm Output Intensity – 50-60 mW/cm2

      436 nm Output Intensity – 20-25 mW/cm2

    • 500 Watt 6” DUV/NUV Lightsource (with 220 nm, 254 nm, single wavelength and broadband 365/405/436 nm mirror sets)

      220 nm Output Intensity – 8-10 mW/cm2

      254 nm Output Intensity – 12-15 mW/cm2

      280 nm Output Intensity – 15-18 mW/cm2

      310 nm Output Intensity – 18-20 mW/cm2

      365 nm Output Intensity – 35-40 mW/cm2

      405 nm Output Intensity – 65-70 mW/cm2

      436 nm Output Intensity – 12-15 mW/cm2


  • High-resolution uniform exposure beam
    • Uniform Beam Size: 6” diameter/square Beam Uniformity:

      <±1% over 2” Round Area

      <±2% over 4” Round Area

      <±2.5% over 6” Round Area

    • Uniform Beam Size: 8” diameter/square Beam Uniformity:

      <±1% over 4” Square Area

      <±2% over 6” Square Area

      <±3% over 8” Square Area


  • NUV Printing Resolution:

    (with 1.0 μm thick positive photoresist and NUV lightsource)

    <0.5 μm for vacuum/hard contact

    <0.8 μm for soft contact

    <1 μm for 20 μm proximity gap

    <2 μm for 30 μm proximity gap


  • DUV Printing Resolution:

    (with 0.5 μm thick DUV photoresist and DUV lightsource)

    <0.3 μm for vacuum/hard contact

    <0.5 μm for soft contact

  • Patterned Sapphire Substrate (PSS) printing

  • SU-8 printing of up to 300 μm thick SU-8 with up to 10:1 aspect ratios

  • Soft/Hard Contact, Vacuum Contact, and Proximity Printing

  • Precision Z-axis adjust chuck motion with pressure adjustable mechanical clutch (for setting of substrate-to-mask pressure) with auto-planarization (for leveling of wafer to mask)

  • Easily interchangeable chuck and mask holder for use with single die and piece-parts up to 8” wafers/substrates

  • Coarse mask rotation motion up to +/-45 degrees

  • Nitrogen purge between mask and substrate/wafer to prevent pre-mature pulling of contact vacuum during alignment due to leaking substrate vacuum from non-planar wafers/substrates and for faster release of contact vacuum between wafer/substrates and mask

  • Constant Power/Constant Intensity Controlling Power Supply

  • Microscope Memory Pre-alignment Function (for return of microscope to last set alignment position)

  • Optional prism blocks for reducing minimum Split-field Dual CCD Camera separation to mmmcam 10 mm

  • Manual System with throughout of 60-75+ WPH wafers/hour (Operator and process dependent)

  • Semi-Auto with PLC and Touch Panel Control/Operation for high throughput 75-85+ WPH (Operator and process dependent)

  • Fully-Auto System with throughput of 120-130+ WPH (process dependent)
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