Key Performance Features

High-intensity beam output
- 350 Watt 6” NUV Lightsource (with broadband 365/400/436 nm mirrors)
  365 nm Output Intensity – 20-22 mW/cm2
  
  400 nm Output Intensity – 40-45 mW/cm2
  
  436 nm Output Intensity – 10-12 mW/cm2
- 500 Watt 6” DUV/NUV Lightsource (with 220 nm, 254 nm, single wavelength and broadband 365/400/436 nm mirror sets)
  220 nm Output Intensity – 8-10 mW/cm2
  
  254 nm Output Intensity – 12-15 mW/cm2
  
  365 nm Output Intensity – 35-40 mW/cm2
  
  400 nm Output Intensity – 65-70 mW/cm2
  
  436 nm Output Intensity – 12-15 mW/cm2

High-resolution uniform exposure beam
- Uniform Beam Size: 6” diameter/square Beam Uniformity:
  < ±1% over 2” Round Area
  
  < ±2% over 4” Round Area
  
  < ±3% over 6” Round Area
- Uniform Beam Size: 8” diameter/square Beam Uniformity:
  < ±1% over 4” Square Area
  
  < ±2% over 6” Square Area
  
  < ±3% over 8” Square Area

NUV Printing Resolution:
(with 1.2 micron thick positive photoresist and NUV lightsource)

< 0.5 micron for vacuum/hard contact

< 0.8 micron for soft contact

< 1 micron for 50 micron proximity gap

< 2 micron for 100 micron proximity gap

DUV Printing Resolution:
(with 0.5 micron thick DUV photoresist and DUV lightsource)

< 0.3 micron for vacuum/hard contact

< 0.5 micron for soft contact


Key Performance Features:

High-intensity beam output 350 Watt 6” NUV Lightsource (with broadband 365/400/436 nm mirrors) 365 nm Output Intensity – 20-22 mW/cm2 400 nm Output Intensity – 40-45 mW/cm2 436 nm Output Intensity – 10-12 mW/cm2 500 Watt 6” DUV/NUV Lightsource (with 220 nm, 254 nm, single wavelength and broadband 365/400/436 nm mirror sets) 220 nm Output Intensity – 8-10 mW/cm2 254 nm Output Intensity – 12-15 mW/cm2 365 nm Output Intensity – 35-40 mW/cm2 400 nm Output Intensity – 65-70 mW/cm2 436 nm Output Intensity – 12-15 mW/cm2 High-resolution uniform exposure beam Uniform Beam Size: 6” diameter/square Beam Uniformity: < ±1% over 2” Round Area < ±2% over 4” Round Area < ±3% over 6” Round Area Uniform Beam Size: 8” diameter/square Beam Uniformity: < ±1% over 4” Square Area < ±2% over 6” Square Area < ±3% over 8” Square Area NUV Printing Resolution: (with 1.2 micron thick positive photoresist and NUV lightsource) < 0.5 micron for vacuum/hard contact < 0.8 micron for soft contact < 1 micron for 50 micron proximity gap < 2 micron for 100 micron proximity gap DUV Printing Resolution: (with 0.5 micron thick DUV photoresist and DUV lightsource) < 0.3 micron for vacuum/hard contact < 0.5 micron for soft contact	Patterned Sapphire Substrate (PSS) printing SU-8 printing of up to 300 micron thick SU-8 with up to 10:1 aspect ratios Soft/Hard Contact, Vacuum Contact, and Proximity Printing Precision Z-axis adjust chuck motion with pressure adjustable mechanical clutch (for setting of substrate-to-mask pressure) with auto-planarization (for leveling of wafer to mask) Easily interchangeable chuck and mask holder for use with single die and piece-parts up to 8” wafers/substrates Coarse mask rotation motion up to +/-45 degrees Nitrogen purge between mask and substrate/wafer to prevent pre-mature pulling of contact vacuum during alignment due to leaking substrate vacuum from non-planar wafers/substrates and for faster release of contact vacuum between wafer/substrates and mask Constant Power/Constant Intensity Controlling Power Supply Microscope Memory Pre-alignment Function (for return of microscope to last set alignment position) Optional prism blocks for reducing minimum Split-field Dual CCD Camera separation to mmmcam 10 mm Manual System with throughout of 60-75+ WPH wafers/hour (Operator and process dependent) Semi-Auto with PLC and Touch Panel Control/Operation for high throughput 75-85+ WPH (Operator and process dependent) Fully-Auto System with throughput of 120-130+ WPH (process dependent)
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